Title :
Efficient CIGS solar cells prepared by electrodeposition
Author :
Guimard, D. ; Bodereau, N. ; Kurdi, J. ; Guillemoles, J.F. ; Lincot, D. ; Grand, P.P. ; BenFarrah, M. ; Taunier, S. ; Kerrec, O. ; Mogensen, P.
Author_Institution :
Lab. d´´Electrochimie, CNRS, Paris, France
Abstract :
Cu(In,Ga)Se/sub 2//CdS/ZnO cells with efficiencies close to 19% have been obtained with films prepared by coevaporation of the elements. Electrodeposition has the potential to become a suitable method for large production of CIGS solar modules. In this paper, we present the results of an on going collaboration project, between CNRS-ENSCP, EDF (Electricite de France) and SUR (Saint Gobain Recheche) with the support of ADEML. The objective of the project is to develop high-efficiency electrodeposited CIS cells and modules. A proprietary process allows to elaborate cells with different band-gap absorbers. Band-gap materials between 1.00 and 1.5 eV have been achieved. The record cell with an absorber of 1.47 eV yields to an efficiency of 10.2 % (no AR coating, total area 0.1 cm/sup 2/). The short circuit current is 23.2 mA cm/sub 3/, the open circuit voltage is 741 mV and the fill factor is 59.6 %. The properties of this cell are presented.
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; electrodeposition; energy gap; gallium compounds; indium compounds; semiconductor growth; semiconductor thin films; short-circuit currents; solar cells; ternary semiconductors; vacuum deposition; wide band gap semiconductors; zinc compounds; 1.00 to 1.5 eV; 10.2 percent; 741 mV; CIGS solar cell; CIGS solar module; Cu(InGa)Se/sub 2/-CdS-ZnO; band-gap absorber; band-gap material; coevaporation; efficiency; electrodeposition; fill factor; open circuit voltage; short circuit current;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
