Title :
X-ray emission study of the ZnO/Cu(In,Ga)(S,Se)/sub 2/ interface before and after damp heat treatment
Author :
Kötschau, I.M. ; Bär, M. ; Fischer, Ch.-H. ; Grimm, A. ; Lauermann, I. ; Reichardt, Joerg ; Sieber, L. ; Sokoll, S. ; Lux-Steiner, M.C. ; Weinhardt, L. ; Fuchs, O. ; Heske, C. ; Jung, C. ; Gudat, W. ; Niesen, T.P. ; Karg, F.
Author_Institution :
Hahn-Meitner-Inst., Berlin, Germany
Abstract :
The influence of accelerated lifetime tests on the ZnO/Cu(In,Ga)(S,Se)/sub 2/ interface was studied by soft X-ray emission spectroscopy prior and after damp heat treatment. ZnO-layers were grown either by an ion layer gas reaction (ILGAR) process or by rf-sputtering from an i-ZnO target. Prior to the ZnO deposition a Cd/sup 2+//NH/sub 3/ pretreatment was applied to the absorbers. We report in detail on the changes in the S L/sub 2,3/ X-ray emission spectra, in which we can monitor an X-ray induced formation of a sulfate species at the interface. We find that this reaction depends strongly on the particular choice of the ZnO deposition process.
Keywords :
X-ray emission spectra; copper compounds; gallium compounds; heat treatment; indium compounds; interface structure; life testing; semiconductor thin films; solar cells; sputtered coatings; ternary semiconductors; wide band gap semiconductors; zinc compounds; ZnO-Cu(InGa)(SSe)/sub 2/; absorbers; accelerated lifetime tests; damp heat treatment; ion layer gas reaction; rf sputtering; soft X-ray emission spectroscopy; sulfate species;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
