The photovoltaic properties depending on growth temperature of Cu(In,Ga)Se/sub 2/ absorber layer

Author

Kim, S.K. ; Lee, J.C. ; Kang, K.W. ; Yoon, K.H. ; Park, I.J. ; Song, J. ; Han, S.O.

Author_Institution

Photovoltaic Res. Center, Korea Inst. of Energy Res., Taejon, South Korea

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

527

Abstract

Cu(In,Ga)Se/sub 2/ absorber layers were fabricated by three-stage co-evaporation of metal elements, the experimental parameters affecting the performance of film and devices are numerous. The effect of the substrate temperature of 1st stage was found not to be so important, and 350/spl deg/C to be the lowest optimum temperature. In the case of substrate temperatures at 2nd/3rd stage, the optimum temperature was revealed to be 550/spl deg/C. The XRD results of CIGS films showed a strong (112) preferred orientation and the Raman spectra of CIGS films showed only the Al mode peak at 173 cm/sup -1/. SEM results revealed very small grains at 2nd/3rd stage substrate temperature of 480/spl deg/C. At higher temperatures, the grain size increased together with a reduction in the number of the voids.

Keywords

Raman spectra; X-ray diffraction; copper compounds; gallium compounds; grain size; indium compounds; photovoltaic effects; scanning electron microscopy; semiconductor thin films; solar absorber-convertors; ternary semiconductors; texture; vacuum deposition; voids (solid); 350 degC; 480 degC; 550 degC; Cu(InGa)Se/sub 2/; Raman spectra; SEM; X-ray diffraction; XRD; absorber layer; grain size; growth temperature; photovoltaic properties; scanning electron microscopy; strong (112) preferred orientation; substrate temperature; three-stage co-evaporation; voids;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305337