Thin film CIGS-based solar cells with an In-based buffer layer fabricated by chemical bath deposition

Author

Larina, Lyudmila ; Kim, Ki Hwan ; Yoon, Kyung Hoon ; Konagai, Makoto ; Byung Tae Ahn

Author_Institution

Dept. of Mater. Sci. & Eng., KAIST, Daejeon, South Korea

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

531

Abstract

In-based buffer layers have been employed as an alternative to the CdS buffer layer for Cu(In,Ga)Se/sub 2/ (CIGS)-based solar cells. Chemical bath deposition (CBD) technique was applied to prepare the In-based films. XRD analysis has indicated that the developed buffer layer exhibited a good polycrystalline structure and consisted of indium sulphide and indium oxide hydroxide phases. Based on the EDS, XPS and XRD measurements the developed In-based buffer layer has been characterized as In/sub x/(OOH)/sub y/S/sub z/. The morphology of In/sub x/(OOH)/sub y/S/sub z/ films depended on the substrates and has been controlled by the deposition time. The conversion efficiency of the CIGS solar cell with 30 nm thick In/sub x/(OOH)/sub y/S/sub z/ buffer layer was 10.0%, while that of the CIGS cell with 60 nm thick CdS was 13.4%.

Keywords

X-ray chemical analysis; X-ray diffraction; X-ray photoelectron spectra; copper compounds; crystal structure; gallium compounds; indium compounds; liquid phase deposition; semiconductor thin films; solar cells; surface morphology; ternary semiconductors; 10.0 percent; 13.4 percent; 30 nm; 60 nm; Cu(InGa)Se/sub 2/; EDS; In-based buffer layer; In/sub x/(OOH)/sub y/S/sub z/; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; chemical bath deposition; conversion efficiency; deposition time; energy dispersive spectra; morphology; polycrystalline structure; thin film solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305338