DocumentCode
413616
Title
(Zn,In)S/sub x/ alloy buffer for CuInS/sub 2/ solar cells
Author
Hashimoto, Yoshio ; Kobayashi, Yoshinori ; Ito, Kentaro
Author_Institution
Dept. of Electr. & Electron. Eng., Shinshu Univ., Nagano, Japan
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
535
Abstract
We have studied (Zn,In)S/sub x/ alloy layers deposited from chemical baths as buffer layers for CuInS/sub 2/ solar cells. Zn composition of alloy buffer is as low as 1%, when it is deposited from chemical baths consisting of ZnI/sub 2/, InI/sub 3/, CH/sub 3/CSNH/sub 2/, and NH/sub 4/I. The performance of solar cells using above alloy buffer, however, varies with ZnI/sub 2/ composition of the chemical bath. The short circuit current increases when the ZnI/sub 2/ composition of the bath increases. This behavior suggests that a Zn compound layer deposited very near the interface varies the band alignment and plays a significant role in the solar cell performance.
Keywords
band structure; indium compounds; liquid phase deposition; semiconductor thin films; short-circuit currents; solar cells; wide band gap semiconductors; zinc compounds; (ZnIn)S/sub x/; CuInS/sub 2/; Zn composition; alloy buffer; band alignment; short circuit current; solar cell; solar cell performance;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305339
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