Title :
Semi-transparent Cu(In/sub 1-x/,Ga/sub x/)Se/sub 2/ thin film solar cells using an indium tin oxide back electrode
Author :
Tokado, Takehito ; Nakada, Tokio
Author_Institution :
Dept. of Electr. Eng. & Electron., Aoyama Gakuin Univ., Kanagawa, Japan
Abstract :
Cu(In/sub 1-x/,Ga/sub x/)Se/sub 2/(CIGS)-based thin film solar cells have been fabricated using an indium tin oxide (ITO) back contact as an alternative to Mo. The CIGS/ITO contact showed ohmic behavior for temperatures ranging from 80 K to 300 K. The optical transmission of CuGa/sub 2/Se/sub 2/ (CGS)-based solar cells rises at 740 nm, which corresponds to the band-gap energy of the CGS absorber layer, resulting in semitransparent behavior in the infrared region. These results suggest this type of CIGS-based solar cell has potential for use in CIGS-based tandem solar cells and other applications.
Keywords :
copper compounds; energy gap; gallium compounds; indium compounds; infrared spectra; ohmic contacts; semiconductor thin films; solar cells; ternary semiconductors; tin compounds; 740 nm; 80 to 800 K; Cu(In/sub 1-x/Ga/sub x/)Se/sub 2/-ITO; CuInGaSe2-InSnO; absorber layer; back electrode; band-gap energy; infrared region; ohmic behavior; optical transmission; semi-transparent thin film solar cell;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
