Title :
Effect of boron doping on the properties of chemically deposited CdS films
Author :
Lee, Jaehyeong ; Yi, Junsin ; Yang, Keajoon
Author_Institution :
Sch. of Electron. & Inf. Eng., Kunsan Nat. Univ., South Korea
Abstract :
Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 /spl Omega/-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when boron doped CdS film as the window layer was used.
Keywords :
II-VI semiconductors; boron; cadmium compounds; electrical resistivity; liquid phase deposition; semiconductor doping; semiconductor thin films; solar cells; 2 ohmcm; CdS-CdTe; boron doping; chemical bath deposition; electrical properties; optical properties; resistivity; solar cell; window layer;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
