DocumentCode
413619
Title
New ways of developing glass/CG/CdS/CdTe/metal thin film solar cells based on a new model - paper 2
Author
Dharmadasa, I.M. ; Samantilleke, A.P. ; Young, J. ; Chaure, N.B.
Author_Institution
Sheffield Hallam Univ., UK
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
547
Abstract
An alternative model for glass/CG/CdS/CdTe/metal solar cell is presented. Using guidelines based on this new model, the authors have fabricated improved devices producing open-circuit voltage (V/sub oc/) values over 600 mV, fill factor (FF) values over 0.60 and the short-circuit current density (J/sub sc/) values over 60 mAcm/sup -2/ for best devices. Although V/sub oc/ and FF could be further improved, the remarkable improvement of J/sub sc/ indicates the possibility of further development of CdS/CdTe solar cell. Positive effects of n-type doping of CdTe with iodine and MlS type electrical contacts are presented.
Keywords
II-VI semiconductors; MIS structures; cadmium compounds; iodine; semiconductor device models; semiconductor doping; semiconductor thin films; short-circuit currents; solar cells; MlS type electrical contacts; SiO/sub 2/-CdTe-CdS:I; fill factor; n-type doping; open-circuit voltage; short-circuit current density; thin film solar cells;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305342
Link To Document