Optimization and characterization of highly conductive and transparent Al-doped ZnO films for solar cell applications

Author

Singh, A.V. ; Mehra, R.M. ; Wakahara, A. ; Yoshida, A.

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi South Campus, New Delhi, India

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

551

Abstract

Highly conductive and transparent Al-doped ZnO (AZO) films have been deposited on corning glass by pulsed laser deposition technique with XeCl laser (/spl lambda/ = 308 nm). The structural, optical and electrical properties of AZO films have been investigated to optimize Al/sub 2/O/sub 3/ content, substrate temperature, target-substrate distance, thickness and oxygen pressure. Films deposited at optimized conditions show the lowest resistivity value of 1.32 /spl times/ 10/sup -4/ /spl Omega/cm and maximum transmittance = 91%. The optimization of the deposition parameters to obtain device quality has been discussed in terms of figure of merit. Use of oxygen gas prevents the films from black coloration. The variation in band gap has been analyzed by Burstein and Moss effect and many body interactions.

Keywords

aluminium; electrical resistivity; energy gap; pulsed laser deposition; semiconductor doping; semiconductor thin films; solar cells; wide band gap semiconductors; zinc compounds; 1.32E-4 ohmcm; 308 nm; Burstein-Moss effect; SiO/sub 2/; ZnO:Al; band gap; black coloration; conductive film; corning glass; deposition parameter; electrical properties; many body interaction; maximum transmittance; optical properties; oxygen pressure; pulse laser deposition; resistivity; solar cell application; structural properties; substrate temperature; target-substrate distance; thickness; transparent film;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305343