Radiation response of Cu(In,Ga)Se/sub 2/ solar cells

Author

Jasenek, A. ; Rau, U. ; Weinert, K. ; Schock, H.W. ; Werner, J.H.

Author_Institution

Inst. of Phys. Electron., Stuttgart Univ., Germany

Volume

1

fYear

2003

fDate

18-18 May 2003

Firstpage

593

Abstract

This contribution reviews the response of Cu(In,Ga)Se/sub 2/ thin-film solar cells to irradiation with high-energy electrons and protons of various energies and compares the results with the radiation response of other thin-film and monocrystalline solar cells for space applications. We analyze the post-irradiation thermal annealing behavior of Cu(In,Ga)Se/sub 2/ in the temperature range of 350 K < T < 420 K. This material also displays illumination-enhanced recovery without elevated temperatures. Unlike other semiconductor materials that exhibit illumination-enhanced annealing, Cu(In,Ga)Se/sub 2/ does not show enduring device recovery after minority carrier injection in the dark.

Keywords

annealing; copper compounds; electron beam effects; gallium compounds; indium compounds; minority carriers; proton effects; radiation hardening (electronics); semiconductor thin films; solar cells; ternary semiconductors; 350 to 420 K; Cu(InGa)Se/sub 2/; high-energy electron; high-energy proton; illumination-enhanced annealing; minority carrier injection; post-irradiation thermal annealing; radiation response; space application; thin-film solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1305352