DocumentCode
413632
Title
5-junction III-V solar cells for space applications
Author
Dimroth, F. ; Baur, C. ; Meusel, M. ; van Riesen, S. ; Bett, Andreas W.
Author_Institution
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
616
Abstract
Monolithic multi-junction III-V solar cells with five active junctions, namely AlGaInP, GaInP, AlGaInAs, GaInAs and Ge have been realized for the first time. An open circuit voltage of 4826 mV was measured. The cells are expected to benefit of a superior radiation hardness as the thickness of each individual subcell is only in the range of 120-1600 nm. The measurement of important parameters like the IV-characteristics or the quantum efficiency of individual subcells is extremely challenging but first measurements were successful and are discussed in this paper.
Keywords
III-V semiconductors; aerospace instrumentation; aluminium compounds; gallium compounds; indium compounds; radiation hardening (electronics); semiconductor junctions; solar cells; 120 to 1600 nm; 4826 mV; AlGaInP-GaInP-AlGaInAs-GaInAs-Ge; Ge; IV-characteristics; monolithic multi-junction; open circuit voltage; quantum efficiency; solar cell; space application; superior radiation hardness;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305357
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