Title :
5-junction III-V solar cells for space applications
Author :
Dimroth, F. ; Baur, C. ; Meusel, M. ; van Riesen, S. ; Bett, Andreas W.
Author_Institution :
Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany
Abstract :
Monolithic multi-junction III-V solar cells with five active junctions, namely AlGaInP, GaInP, AlGaInAs, GaInAs and Ge have been realized for the first time. An open circuit voltage of 4826 mV was measured. The cells are expected to benefit of a superior radiation hardness as the thickness of each individual subcell is only in the range of 120-1600 nm. The measurement of important parameters like the IV-characteristics or the quantum efficiency of individual subcells is extremely challenging but first measurements were successful and are discussed in this paper.
Keywords :
III-V semiconductors; aerospace instrumentation; aluminium compounds; gallium compounds; indium compounds; radiation hardening (electronics); semiconductor junctions; solar cells; 120 to 1600 nm; 4826 mV; AlGaInP-GaInP-AlGaInAs-GaInAs-Ge; Ge; IV-characteristics; monolithic multi-junction; open circuit voltage; quantum efficiency; solar cell; space application; superior radiation hardness;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
