DocumentCode
413643
Title
Theoretical study of the impact of bulk and interface recombination on the performance of GaInP/GaAs/Ge triple junction tandem solar cells
Author
Ghannam, M.Y. ; Poortmans, Jozef ; Nijs, J.F. ; Mertens, R.P.
Author_Institution
IMEC, Leuven, Belgium
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
666
Abstract
The impact of interface recombination on the performance of the GaInP/GaAs/Ge monolithic triple junction tandem cell operating under one sun AM1.5 global spectrum as well as under one sun and concentrated AM1.5 direct spectrum is investigated taking into account doping dependent parameters and bandgap narrowing. An optimum structure is proposed and values for the maximum possible efficiency are estimated. Comparison with reported experimental results confirms the accuracy of the analysis and leads to values of the efficiency potentially achievable with relatively good surface passivation.
Keywords
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; germanium; indium compounds; passivation; solar cells; surface recombination; GaInP-GaAs-Ge; bandgap; bulk recombination; doping dependent parameter; efficiency; interface recombination; optimum structure; surface passivation; triple junction tandem solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305369
Link To Document