Theoretical study of the impact of bulk and interface recombination on the performance of GaInP/GaAs/Ge triple junction tandem solar cells

The impact of interface recombination on the performance of the GaInP/GaAs/Ge monolithic triple junction tandem cell operating under one sun AM1.5 global spectrum as well as under one sun and concentrated AM1.5 direct spectrum is investigated taking into account doping dependent parameters and bandgap narrowing. An optimum structure is proposed and values for the maximum possible efficiency are estimated. Comparison with reported experimental results confirms the accuracy of the analysis and leads to values of the efficiency potentially achievable with relatively good surface passivation.