• DocumentCode
    413653
  • Title

    High energy proton degradation in GaAs solar cells

  • Author

    Warner, Jeffrey H. ; Walters, Robert J. ; Messenger, Scott R. ; Summers, Geoffrey P.

  • Author_Institution
    US Naval Res. Lab., Washington, DC, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    712
  • Abstract
    In this paper we compare the energy dependences (1-500 MeV) of the proton damage coefficients for p/sup +/n GaAs solar cells with previously reported calculations of nonionizing energy loss (NIEL). For proton energies E<10 MeV, the damage coefficients all follow an approximate 1/E dependence. For E>10 MeV, the damage coefficients vary but are bounded by the total and elastic NIEL.
  • Keywords
    III-V semiconductors; gallium arsenide; proton effects; radiation hardening (electronics); solar cells; 1 to 500 MeV; GaAs; elastic NIEL; high energy proton degradation; nonionizing energy loss; proton damage coefficient; solar cell; total NIEL;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305381