DocumentCode
413658
Title
Perspectives for application of amorphous silicon thin-film solar cells in conditions of higher-level space radiation
Author
Grigorieva, G. ; Kagan, M. ; Nadorov, V. ; Zvyagina, K.
Author_Institution
KVANT Res. & Production Enterprise, Moscow, Russia
Volume
1
fYear
2003
fDate
18-18 May 2003
Firstpage
734
Abstract
Potential application of thin-film amorphous silicon solar cells for power generation on board spacecraft designed to operate in orbits with high-intensity fluence of electrons and protons, in the radiation belts of the Earth are discussed in this paper. The three-junction solar cells based on the amorphous silicon and germanium alloy with the substrate of 25 microns steel foil were the baseline specimen for this research work. Such solar cells had the initial efficiency of 10%, measured at AM0. The laboratory tests involved irradiation of the amorphous silicon based solar cells with 3 MeV electrons and 20 MeV protons and demonstrated their high resistance to radiation. Taking into account this fact, also very favorable cost-effectiveness and power-to-weight characteristics, as well as affirmative results from the orbital flight test of an a-Si solar array on board of MIR space station, this paper gives an assessment of functional capabilities of the a-Si cells for application in the Earth orbits with a high radiation level.
Keywords
aerospace instrumentation; amorphous semiconductors; electron beam effects; elemental semiconductors; germanium; proton effects; radiation hardening (electronics); semiconductor thin films; silicon; solar cell arrays; space power generation; 10 percent; 20 MeV; 25 mum; 3 MeV; Ge; MIR space station; Si; amorphous silicon thin-film solar cell; electron radiation; higher-level space radiation; orbital flight test; power generation; proton radiation; solar array; spacecraft; steel foil; three-junction solar cell;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1305387
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