Title :
In-N bond formation mechanism in GaInAsN layers grown on GaAs [001] substrates
Author :
Hashimoto, Aiko ; Uchida, Masayuki ; Suzuki, Takashi ; Yamamoto, Kenji ; Yamamoto, Akio
Author_Institution :
Dept. of Electr. & Electron. Eng., Fukui Univ., Japan
Abstract :
We have investigated the mechanism of the In-N bond formation by the Raman characterization of the GaInAsN system. The results indicate that the In-N bonds form preferentially against the Ga-N bond formation in the GaInAsN layers and the isolated In-N bonds may be mainly formed during the growth. Moreover, the preferential In-N bond formation may be controlled by the microscopic interaction such as local strain balance mechanism. The present results lead us to a concept of the locally strain-balanced epitaxy by controlling of the atomic arrangement during growth to improve the crystal quality of GaInAsN.
Keywords :
III-V semiconductors; Raman spectra; arsenic compounds; bonds (chemical); crystal structure; gallium compounds; indium compounds; semiconductor epitaxial layers; GaAs; GaInAsN; Raman characterization; atomic arrangement; bond formation mechanism; crystal quality; local strain balance mechanism; microscopic interaction;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3