In-N bond formation mechanism in GaInAsN layers grown on GaAs [001] substrates

We have investigated the mechanism of the In-N bond formation by the Raman characterization of the GaInAsN system. The results indicate that the In-N bonds form preferentially against the Ga-N bond formation in the GaInAsN layers and the isolated In-N bonds may be mainly formed during the growth. Moreover, the preferential In-N bond formation may be controlled by the microscopic interaction such as local strain balance mechanism. The present results lead us to a concept of the locally strain-balanced epitaxy by controlling of the atomic arrangement during growth to improve the crystal quality of GaInAsN.