• DocumentCode
    413712
  • Title

    The choice of silicon wafer for the production of low-cost rear-contact solar cells

  • Author

    McIntosh, Keith R. ; Cudzinovic, Michael J. ; Smith, David D. ; Mulligan, William P. ; Swanson, Richard M.

  • Author_Institution
    SunPower Corp., Sunnyvale, CA, USA
  • Volume
    1
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    971
  • Abstract
    SunPower manufactures high-efficiency rear-contact solar cells. To offer these cells at a competitive price, SunPower requires a source of low-cost wafers with the necessary lifetime, thickness and resistivity to attain a cell efficiency of at least 20%. With simulation and experiment, this paper investigates how each of these parameters affects the efficiency of SunPower´s low-cost, rear-contact solar cell. It concludes that the cell efficiency approaches an optimum when the wafers have (i) a lifetime in excess o 1 ms, (ii) a thickness of 160-280 /spl mu/m, and (iii) a resistivity of 2-10 /spl Omega/cm (n-type). The requirement of the high lifetime restricts the wafer choice to FZ, PV-FZ or n-type Cz; but the wide tolerance on wafer thickness and resistivity help lower the wafer cost by maximizing the yield from a silicon ingot.
  • Keywords
    carrier lifetime; crystal growth from melt; electrical resistivity; elemental semiconductors; semiconductor device manufacture; semiconductor device models; silicon; solar cells; zone melting; 160 to 280 mum; 2 to 10 ohmcm; Si; SunPower; cell efficiency; lifetime; low-cost rear-contact solar cell; resistivity; silicon wafer; wafer thickness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1305445