Investigation on mc-Si bulk passivation using deuterated silicon-nitride

To investigate the passivation mechanism of thermally treated PECVD hydrogenated silicon nitride, hydrogen is replaced by deuterium, using deuterated gases during deposition. No difference in passivating properties between both silicon nitride layers are observed. SIMS and ERD show that deuterium is diffusing directly from the silicon nitride layers during a thermal treatment, however the involved concentrations are very low. The amount of deuterium, diffusing deep into the bulk is below detection limit. This determines upper limits on both concentration and possible types of defects that are passivated.