A gettering simulator: evaluating contamination and gettering processes

Author

Del Cañizo, C. ; Caballero, L.J. ; Esteban, R. ; Luque, A.

Author_Institution

Inst. de Energia Solar, Univ. Politecnica de Madrid, Spain

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

993

Abstract

A software tool that simulates contamination and gettering processes is presented. It is based on a quantitative model that takes into account impurity diffusion and segregation, interaction with point defects, precipitation and trapping. It also relates impurity content with lifetime. The simulator is a helpful tool to study dependence of impurity content with temperature, evolution with process duration and influence of parameters on gettering efficiency. A friendly interface facilitates the control on the choice of parameters and the obtention of values and graphics. Some examples of application are shown.

Keywords

aluminium; contamination; diffusion; digital simulation; elemental semiconductors; getters; gold; impurity distribution; interstitials; iron; phosphorus; precipitation; segregation; silicon; vacancies (crystal); Si:Al,Au; Si:Al,Fe; Si:P,Au; Si:P,Fe; contamination; gettering processes; gettering simulator; impurities-point defects interaction; impurity content; impurity diffusion; impurity segregation; precipitation; quantitative model; software tool; trapping;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306078