Design criteria for amorphous/crystalline silicon heterojunction solar cells - a simulation study

Author

Stangl, R. ; Froitzheim, A. ; Schmidt, M. ; Fuhs, W.

Author_Institution

Dept. Silizium Photovoltaik, Hahn-Meitner-Inst. Berlin, Germany

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1005

Abstract

Amorphous/crystalline silicon heterojunction solar cells, TCO/a-Si:H(n)/c-Si(p), are investigated by means of numerical computer simulation. The influence of (1) the a-Si:H(n) emitter thickness, (2) the defect density of the emitter/wafer interface and (3) the TCO/emitter front contact system on the solar cell-performance is studied and compared with experimental results. The use of an intrinsic a-Si:H(i) buffer layer and of a p-doped a-Si:H(p) back surface field layer is addressed, modelling TCO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p) solar cell structures. Some general design criteria for a-Si:H/c-Si heterojunction solar cells are derived, suggesting an optimum emitter thickness for a given (measured) front contact TCO/emitter built-in potential.

Keywords

amorphous semiconductors; elemental semiconductors; passivation; semiconductor device models; semiconductor heterojunctions; silicon; solar cells; Si; amorphous-crystalline silicon heterojunction solar cells; back surface field layer; defect density; emitter front contact system; emitter thickness; emitter-wafer interface; front contact transparent conductive oxide-emitter built in potential; intrinsic buffer layer; numerical computer simulation; solar cell performance; solar cell structures;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306081