Quantitative correlation of the metastable defect in Cz-silicon with different impurities

In order to identify the components responsible for the creation of the metastable defect in boron-doped Cz-Si, the impact of different impurities on the defect concentration has been examined carefully on a wide range of different Cz-materials by means of lifetime measurements. In good agreement with previous studies a linear dependence on the boron concentration has been found. The impact of carbon can be neglected. Concerning the correlation with the interstitial oxygen concentration, a correlation exponent between 1.5 and 1.9 has been found. This exponent is shifted to its lower bound after an optimized high-temperature pretreatment, whose impact on the quantitative correlations is investigated in detail. The strong scatter in the oxygen correlation points towards an indirect impact of oxygen on the defect center. Since the vacancy concentration is known to strongly influence oxygen behavior, its impact on the metastable defect concentration is investigated.