Electrical property evaluation of polycrystalline silicon thin film on textured substrate

Author

Muhida, Riza ; Kawamura, Tomohiro ; Harano, Tomokazu ; Okajima, Masaya ; Matsui, Takuya ; Toyama, Toshihiko ; Okamoto, Hiroaki ; Honda, Shinya ; Takakura, Hideyuki ; Hamakawa, Yoshihiro

Author_Institution

Dept. of Phys. Sci., Osaka Univ., Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1096

Abstract

The electrical conductivities of the poly-Si thin films deposited on the substrates with different surface texture have been studied using the alternating current (AC)-conductivity measurement technique. The activation energy of the dark conductivities for poly-Si films with deposited on relative low of the root mean square (rms) roughness (/spl sigma/) of 22 nm is close to 0.55 eV indicating intrinsic nature. On other hand, with increase in /spl sigma/>37 nm, poly-Si films exhibits n-type character. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances, optical reflectance, and microstructure are also discussed.

Keywords

crystal microstructure; dark conductivity; elemental semiconductors; reflectivity; semiconductor thin films; silicon; solar cells; surface roughness; surface texture; Si; activation energy; alternating current conductivity measurement; dark conductivities; electrical conductivity; electrical properties; microstructure; optical reflectance; photovoltaic performances; polycrystalline silicon thin film; root mean square roughness; surface texture; textured substrate;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306104