Fast initial light-induced degradation of Czochralski silicon solar cells

The very fast initial degradation of Czochralski-grown silicon solar cell performance has been investigated. The initial degradation occurs at the beginning of the degradation process and is followed by a second slower degradation. Carrier lifetime and spectral response investigation reveal that the initial degradation was due to defect activation in the bulk. Distinctly small temperature dependence observed for the initial degradation suggests distinct defect reaction process from that of the second degradation that is strongly temperature-dependent. The recombination parameters of the defects are analyzed by means of the Shockley-Read-Hall theory.