Recombination at a-Si:H/c-Si heterointerfaces and in a-Si:H/c-Si heterojunction solar cells

Author

Rau, U. ; Nguyen, V.X. ; Mattheis, J. ; Rakhlin, M. ; Werner, J.H.

Author_Institution

Inst. of Phys. Electron., Stuttgart Univ., Germany

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1124

Abstract

The consequences of post-deposition thermal annealing on the recombination velocity at a-Si:H/c-Si heterocontacts and on the performance of a-Si:H/c-Si heterojunction solar cells are investigated. We use a substrate temperature of 110 /spl infin/C for the deposition of the a-Si:H hetero-emitters and a post-deposition anneal for 10 min at 200 /spl infin/C to obtain optimum results in terms of interface recombination velocity, interface defect density, and solar cell performance. Our best solar cell using a p-type FZ base in combination with a-Si:H heterojunction and a metallic Pd/Al back contact has a confirmed efficiency of 15.4% and an open circuit voltage V/sub OC/=658 mV. Solar cells that use a i/p/sup +/ a-Si:H double layer as a back contact obtain a maximum V/sub OC/ of 685 mV but suffer yet from a relatively low fill factor.

Keywords

amorphous semiconductors; annealing; elemental semiconductors; hydrogen; semiconductor heterojunctions; silicon; solar cells; surface recombination; 10 min; 658 mV; 685 mV; Si:H-Si; amorphous Si:H/crystalline Si heterointerfaces; fill factor; heterocontacts; heteroemitters; heterojunction solar cells; i/p/sup +/ amorphous Si:H double layer; interface defect density; interface recombination velocity; metallic Pd/Al back contact; open circuit voltage; p type FZ material; post deposition thermal annealing; solar cell efficiency;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306112