Improvement of SiO/sub 2//Si interface properties using high-pressure H/sub 2/O vapor heating

Author

Sameshima, T. ; Yachi, M. ; Andoh, N.

Author_Institution

Tokyo Univ. of Agric. & Technol., Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1155

Abstract

Improvement of electrical characteristics of SiO/sub 2//Si interfaces was achieved by high-pressure H/sub 2/O vapor annealing. Decay in the excess carrier density induced by pulsed laser irradiation was analyzed by free carrier optical absorption and optical interference effect. 2.1/spl times/10/sup 6/-Pa-H/sub 2/O-vapor annealing at 260/spl deg/C for 3 h increased the carrier lifetime from 820 /spl mu/s (initial) to 2.7 ms for n-type CZ-silicon with 100-nm-thick SiO/sub 2/ thermally grown and to 1.9 ms for n-type CZ-silicon with 120-nm-thick SiO/sub 2/ formed by vacuum evaporation.

Keywords

annealing; carrier density; carrier lifetime; elemental semiconductors; laser beam effects; light absorption; light interference; silicon; silicon compounds; 120 nm; 260 degC; 3 h; 820 mus to 2.7 ms; SiO/sub 2/-Si; SiO/sub 2/-Si interface; carrier density; carrier lifetime; free carrier optical absorption; high pressure H/sub 2/O vapor annealing; high pressure H/sub 2/O vapor heating; n-type CZ-silicon; optical interference effect; pulsed laser irradiation; vacuum evaporation;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306120