• DocumentCode
    413788
  • Title

    Texturing techniques and resulting solar cell parameters on tri-silicon material

  • Author

    Sontag, D. ; Hahn, G. ; Fath, P. ; Bucher, E. ; Krühler, W.

  • Author_Institution
    Fac. of Phys., Konstanz Univ., Germany
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1304
  • Abstract
    Tri-crystalline silicon material (Tri-Si) is a promising alternative to mono-crystalline CZ silicon because of a faster crystallization process and higher wafer stability. The orientation of the three crystals [110] is different to the [100] orientation in CZ material typically used in the photovoltaic industry. As a consequence the common alkaline texture technique using KOH or NaOH cannot be applied. For this reason we compared several alternative texturing methods like mechanical grooving and acidic texture etching, which work independently of crystal orientations. Solar cells were processed from these wafers, and an overview of their surface morphology as well as the resulting cell parameters is given. By applying an antireflection coating we reached the highest efficiencies reported on Tri-Si material.
  • Keywords
    antireflection coatings; crystal orientation; elemental semiconductors; etching; silicon; solar cells; surface morphology; surface recombination; surface texture; Si; acidic texture etching; alkaline texture; antireflection coating; cell parameters; crystal orientation; crystallization; internal quantum efficiencies; mechanical grooving; monocrystalline Czochralski silicon; photovoltaic industry; solar cell; surface morphology; tricrystalline silicon material; wafer stability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306160