Analysis of grid disconnection effect on I-V characteristics in crystalline Si solar cells

I-V characteristics are analyzed in grid-electrode disconnected crystalline Si solar cells. Fill factor decreases with increasing number of disconnected grids. Unlike the ordinarily observed fill factor (FF) deterioration, which is caused by either increase of series resistance (R/sub s/) or that of dark current, grid disconnection deteriorates FF without much increase of R/sub s/ or dark current. This characteristic feature enables us to recognize the cause of accidental FF failure and is useful for immediate recovery of the production line.