The RTCVD160 - a new lab-type silicon CVD processor for silicon deposition on large area substrates

Fast and cost effective silicon deposition is a fundamental requirement for the preparation of crystalline silicon thin-film solar cells. Pursuing the high-temperature approach, chemical vapor deposition (CVD) of silicon layers by thermal decomposition of chlorosilanes is often applied. At Fraunhofer ISE we develop optically heated ("rapid thermal") RTCVD processors, where substrates are mounted in two parallel rows for deposition. In this paper we present a new RTCVD generation which is capable of depositing silicon on two rows of substrates, each up to 125/spl times/300 mm/sup 2/ in size. This RTCVD160 was specially designed for laboratory type purposes. The deposition process based on SiHCl/sub 3/, H/sub 2/, B/sub 2/H/sub 6/ and PH/sub 3/ is completely computer controlled. The optical heating system enables fast temperature ramps and stable process temperatures up to 1300/spl deg/C. Epitaxial growth rates exceeding 5 /spl mu/m/min can be reached with this system.