Hot-wire CVD n-type emitter on p-type crystalline Si solar cells

We have developed efficient p-type crystalline-Si-based solar cells using a fast (1 min) and low-substrate temperature (<220/spl deg/C) hot-wire CVD technique to deposit n-type Si thin films to form n-p junction. We achieved 13.3% energy conversion efficiency with V/sub oc/ of 0.58 V, FF of 0.773, and J/sub sc/ of 29.86 mA/cm/sup 2/ under AM 1.5 for a 1-cm/sup 2/ solar cell, which is the highest reported efficiency to date for a single-junction device using the hot-wire CVD technique. Transmission electron microscopy reveals Epitaxial growth of Si at the junction. Quantum efficiency measurement on this solar cell shows over 90% response in the region between 540 and 780 nm, but a relatively weak blue and near infrared response. The solar cells show no degradation after 1000 hours of standard light soaking.