Hot-wire CVD n-type emitter on p-type crystalline Si solar cells

Author

Qi Wang ; Page, M.R. ; Iwaniczko, Eugene ; Williams, Evan ; Yan, Yanfa ; Wang, T.H. ; Ciszek, T.F.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1427

Abstract

We have developed efficient p-type crystalline-Si-based solar cells using a fast (1 min) and low-substrate temperature (<220/spl deg/C) hot-wire CVD technique to deposit n-type Si thin films to form n-p junction. We achieved 13.3% energy conversion efficiency with V/sub oc/ of 0.58 V, FF of 0.773, and J/sub sc/ of 29.86 mA/cm/sup 2/ under AM 1.5 for a 1-cm/sup 2/ solar cell, which is the highest reported efficiency to date for a single-junction device using the hot-wire CVD technique. Transmission electron microscopy reveals Epitaxial growth of Si at the junction. Quantum efficiency measurement on this solar cell shows over 90% response in the region between 540 and 780 nm, but a relatively weak blue and near infrared response. The solar cells show no degradation after 1000 hours of standard light soaking.

Keywords

chemical vapour deposition; elemental semiconductors; semiconductor epitaxial layers; semiconductor growth; silicon; solar cells; transmission electron microscopy; vapour phase epitaxial growth; 0.58 V; 1 min; 1000 h; 540 to 780 nm; Si; energy conversion; epitaxial growth; hot wire CVD n-type emitter; infrared response; n-p junction; n-type Si thin films; p-type crystalline Si solar cells; quantum efficiency measurement; semiconductor growth; single-junction device; standard light soaking; transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306191