DocumentCode
413822
Title
A combination of boron gettering and phosphorous gettering in Fe-contaminated n+pp+ bifacial silicon cells
Author
Joge, Toshio ; Araki, Ichiro ; Nakashima, Hiroshi ; Matsukuma, Kunihiro
Author_Institution
Hitachi Ltd., Japan
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1455
Abstract
A low temperature boron gettering induced by preceded boron diffusion improves effectively the lifetime of Fe-contaminated n/sup +/pp/sup +/ BSF cells with cooperating preceded phosphorous gettering. The combination with two gettering increased stably the lifetimes to initial high lifetimes. The simulated lifetimes through the cell process using Fe-behavior parameters showed good consistency with measured lifetimes by micro-PCD method and measured concentration of FeB pair by DLTS analysis.
Keywords
boron alloys; carrier lifetime; contamination; deep level transient spectroscopy; diffusion; elemental semiconductors; getters; iron alloys; phosphorus alloys; photoconductivity; silicon; solar cells; DLTS analysis; Fe-contaminated n/sup +/pp/sup +/ bifacial silicon cells; FeB pair concentration; Si-FeB; Si-FeBP; boron diffusion; carrier lifetime; deep level transient spectroscopy; low temperature boron gettering; micro photoconductive decay method; phosphorous gettering;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306198
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