DocumentCode :
413824
Title :
Interdigitated backside buried contact solar cells
Author :
Guo, Jiun-Hua ; Cotter, Jeffrey E.
Author_Institution :
Centre of Excellence for Adv. Silicon Photovoltaics & Photonics, Univ. of New South Wales, Sydney, NSW, Australia
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1463
Abstract :
Backside contact solar cells, such as point contact and interdigitated back contact designs, have demonstrated remarkable performance; however, they often require four to six photolithographic steps to fabricate the rear surface. The buried-contact solar cell technology offers a means to substitute photolithographic processing with laser-lithographic processing, which is currently utilized in large-scale commercial production of BP Solar´s Saturn solar cells. In this paper, we describe experimental work to analyze and correct a shunt resistance problem found in interdigitated backside buried contact (IBBC) solar cells. Preliminary results show that IBBC solar cells have potential for high efficiency.
Keywords :
buried layers; laser materials processing; photolithography; point contacts; solar cells; interdigitated backside buried contact solar cells; laser lithographic processing; photolithographic processing; point contact designs; shunt resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306200
Link To Document :
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