DocumentCode
413828
Title
Simplified transfer process for high-current thin-film crystalline Si solar modules
Author
Auer, Richard ; Horbelt, Renate ; Brendel, Rolf
Author_Institution
Bavarian Center for Appl. Energy Res., Erlangen, Germany
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1479
Abstract
We introduce a one-side metallization scheme for monocrystalline Si thin-film modules from layer transfer. The mini-modules have an area of 5/spl times/5 cm/sup 2/ and consist of five series-connected cells with a thickness of 18 /spl mu/m. We achieve a short-circuit current of 145 mA (29 mA/cm/sup 2/ per cell) and an open-circuit voltage of 3098 mV (619.3 mV per cell) under AM1.5g-illumination at 1000 W/m/sup 2/. The efficiency is 9.1% due to a poor fill factor. A reference module with a two-side metallization reaches a total area efficiency of 12.3%.
Keywords
elemental semiconductors; etching; metallisation; porous semiconductors; semiconductor thin films; silicon; solar cells; 145 mA; 18 micron; 3098 mV; Si; etching; fill factor; high current thin film crystalline Si solar modules; illumination; metallization; monocrystalline Si thin film modules; open circuit voltage; porous materials; short circuit current; transfer process;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306204
Link To Document