Title :
0.5 /spl mu/m-thick /spl mu/c-Si solar cell grown by photo-CVD on highly textured SnO/sub 2/
Author :
Konagai, Makoto ; Hiza, Shuichi ; Ohki, Kazuki ; Yamada, Akira
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
Abstract :
Microcrystalline silicon (/spl mu/c-Si) films and solar cells were prepared by mercury-sensitized photochemical vapor deposition (photo-CVD). The microstructures of the /spl mu/c-Si films on textured SnO/sub 2/ with different haze ratios (from 5% to 64%) were observed with a scanning electron microscope. The observation revealed that the grain boundary density of /spl mu/c-Si on SnO/sub 2/ with higher haze ratios was lower than that on SnO/sub 2/ with lower haze ratios. The effect of textured SnO/sub 2/ with different haze ratios on p-i-n /spl mu/c-Si cell characteristics was discussed and it was found that the optimal haze ratio was around 40%. The 0.6 /spl mu/m-thick /spl mu/c-Si cell on 36%-haze SnO/sub 2/ with a conversion efficiency of 7.3% was achieved.
Keywords :
Raman spectra; amorphous semiconductors; chemical vapour deposition; elemental semiconductors; grain boundaries; photoconductivity; scanning electron microscopy; semiconductor growth; semiconductor thin films; silicon; solar cells; 0.5 micron; 0.6 micron; Si; SnO/sub 2/; conversion efficiency; grain boundary density; mercury sensitized photochemical vapor deposition; microcrystalline silicon films; microstructures; optimal haze ratio; p-i-n microcrystalline Si solar cell; photo CVD; scanning electron microscopy; textured SnO/sub 2/;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
