Photoinduced volume changes in doped a-Si:H films

Author

Sobajima, Y. ; Kamiguchi, H. ; Iida, T. ; Mori, K. ; Yoshida, N. ; Nonomura, S.

Author_Institution

Graduate Sch. of Eng., Gifu Univ., Japan

Volume

2

fYear

2003

fDate

11-18 May 2003

Firstpage

1611

Abstract

Photoinduced volume changes in B and P doped a-Si:H films prepared by plasma enhanced chemical vapor deposition (PECVD) method have been studied. It is found that the magnitude of photoinduced volume expansion (/spl Delta/V/V) in doped films is larger (/spl Delta/V/V/spl sim/6/spl times/10/sup -5/) up to a doping ratio of 0.5% than that of undoped films of /spl Delta/V/V/spl sim/10/sup -6/. And, the photo-response of the conductivity degrades with doping ratio. These results cannot be explained by monotonous movements of Fermi level with doping ratio. The origin of the result is proposed to be local structure changes in a-Si:H network by doping.

Keywords

amorphous semiconductors; boron; elemental semiconductors; hydrogen; phosphorus; photoconductivity; plasma CVD; semiconductor doping; semiconductor growth; semiconductor thin films; silicon; Fermi level; Si:H,B; Si:H,P; amorphous Si:H films; doped films; doping ratio; local structural change; photoconductivity; photoinduced volume changes; photoinduced volume expansion; plasma enhanced chemical vapor deposition; Chemical vapor deposition; Doping; Laser modes; Laser transitions; Optical films; Optical sensors; Photoconductivity; Photovoltaic cells; Plasma chemistry; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306236