High-quality a-Si:H films deposited at 0.7 nm/s by cluster suppressed plasma CVD method

High quality a-Si:H films have been deposited using the cluster-suppressed plasma CVD method. The stabilized FF value of a Schottky cell of 1 /spl mu/m thick a-Si:H film deposited at 0.7 nm/s using the cluster-suppression method is as high as the initial value of a cell of 0.6 /spl mu/m film deposited at 0.2 nm/s using the conventional method. This indicates the advantage of the cluster suppression method over the conventional one. The cell performance depends on the substrate temperature T/sub s/ and the highest power density is obtained at T/sub s/=300/spl deg/C. The value of hydrogen content C/sub H/ has little T/sub s/ dependence, while the R/sub /spl alpha// value decreases sharply from R/sub /spl alpha//=0.2 for T/sub s/=200/spl deg/C to R/sub /spl alpha//=0.034 for T/sub s/=280/spl deg/C. Moreover, a high compressive stress above 9/spl times/10/sup 8/ Nm/sup -2/ is found to degrade the FF value.