Investigation on the role of oxygen in /spl mu/c-Si:H thin film deposited with VHF-PECVD

Author

Yang, Huidong ; Wu, Chunya ; Yaohua Mai ; Zhang, Xiaodan ; Hou, Guofu ; Xue, Junming ; Zhao, Ying ; Geng, Xinhua ; Xiong, Shaozhen

Author_Institution

Inst. of Photoelectron., Nankai Univ., Tianjin, China

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1647

Abstract

By in-situ optical emission spectroscopy (OES) measurements, the different oxygen contamination in /spl mu/c-Si:H films deposited with and without load-lock chamber has been investigated. The results of XPS and FTIR measurements show that oxygen existing in /spl mu/c-Si:H film with different bonding modes, namely Si-O bonding mode, O-H bonding mode and O-O bonding mode. In addition, the influences of oxygen on the structural and electrical properties of films are studied with Raman, conductivity and active energy measurements. The results reveal that the average grain sizes of /spl mu/c-Si:H films strongly depend on the oxygen contamination and a primary explanation has been presented .The electrical properties especially show that the role of oxygen in /spl mu/c-Si:H films is different from those in a Si:H films, the essential mechanism is ongoing to be further explored.

Keywords

Fourier transform spectra; Raman spectra; X-ray photoelectron spectra; amorphous semiconductors; electrical conductivity; elemental semiconductors; grain size; hydrogen; infrared spectra; plasma CVD; silicon; FTIR measurements; O-H bonding mode; O-O bonding mode; Raman scattering; Si-O bonding mode; Si:H; VHF-PECVD; XPS; active energy measurements; electrical conductivity; electrical properties; grain size; in situ optical emission spectroscopy; load lock chamber; luminescence; oxygen contamination;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306245