Title :
Microcrystalline silicon films for solar cells obtained by gas-jet electron-beam PECVD method
Author :
Bilyalov, R. ; Poortmans, J. ; Sharafutdinov, R. ; Khmel, S. ; Shchukin, V. ; Semenova, O. ; Fedina, L. ; Kolesov, B.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The characteristics of thin microcrystalline silicon films obtained by gas-jet electron-beam plasma enhanced chemical vapor deposition (GJ-EB PECVD) method are investigated from the viewpoint of their use for solar cell technology. This method provides a very high deposition rate of 5-10 nm/s in the temperature range of 150-430/spl deg/C. Morphological quality of the films is investigated by means of transmission electron microscopy and Raman spectroscopy. It is shown that a morphological structure of the films consists a mixture of amorphous and microcrystalline fractions. Preliminary electrical characterization of the films is performed using steady-state photoconductivity measurements. The results show a certain potential of GJ-EB PECVD for a solar cell application.
Keywords :
Raman spectra; amorphous semiconductors; dark conductivity; electron beam deposition; elemental semiconductors; energy gap; optical constants; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; transmission electron microscopy; 150 to 430 degC; Raman spectroscopy; Si:H; amorphous fractions; dark conductivity; electrical properties; energy gap; gas jet electron beam PECVD; gas jet electron-beam plasma enhanced chemical vapor deposition; microcrystalline fractions; microcrystalline silicon films; morphological structure; optical constants; solar cell application; solar cell technology; steady state photoconductivity measurements; transmission electron microscopy;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
