Novel carbon source (1,3-disilabutane) for the deposition of microcrystalline silicon carbon

Author

Yagi, Shuhei ; Okabayashi, Takashi ; Abe, Katsuya ; Yamada, Akira ; Konagai, Makoto

Author_Institution

Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1687

Abstract

A new carbon source, 1,3-disilabutane (1,3-DSB), is proposed to fabricate microcrystalline silicon carbon (/spl mu/c-Si/sub 1-y/C/sub y/:H) films by mercury-sensitized photo-chemical vapor deposition (photo-CVD). 1,3-DSB contains a Si-C-Si-C skeleton. Thus, it is expected that the C atoms can easily occupy the substitutional site in the Si network and that the C cluster can be hardly formed in the films, resulting in the improvement of the film quality. /spl mu/c-Si/sub 1-y/C/sub y/:H with a high photosensitivity (under AM 1.5, 100 mW/cm/sup 2/ illumination) of 10/sup 3/ was achieved at the 1,3-DSB/silane rate of 0.05-0.1 and the hydrogen/silane ratio of 8-12.

Keywords

amorphous semiconductors; chemical vapour deposition; infrared spectra; semiconductor growth; semiconductor thin films; silicon compounds; wide band gap semiconductors; Si network; Si-C-Si-C skeleton; Si/sub 1-y/C/sub y/:H; carbon cluster; carbon source; film quality; mercury sensitized photo chemical vapor deposition; microcrystalline silicon carbon; photo CVD; photoconductivity; photosensitivity; silicon network; thin film;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306255