Novel carbon source (1,3-disilabutane) for the deposition of microcrystalline silicon carbon

A new carbon source, 1,3-disilabutane (1,3-DSB), is proposed to fabricate microcrystalline silicon carbon (/spl mu/c-Si/sub 1-y/C/sub y/:H) films by mercury-sensitized photo-chemical vapor deposition (photo-CVD). 1,3-DSB contains a Si-C-Si-C skeleton. Thus, it is expected that the C atoms can easily occupy the substitutional site in the Si network and that the C cluster can be hardly formed in the films, resulting in the improvement of the film quality. /spl mu/c-Si/sub 1-y/C/sub y/:H with a high photosensitivity (under AM 1.5, 100 mW/cm/sup 2/ illumination) of 10/sup 3/ was achieved at the 1,3-DSB/silane rate of 0.05-0.1 and the hydrogen/silane ratio of 8-12.