Wide gap and low resistive hetero-structured SiC/sub X/ films for wide gap window of heterojunction solar cells

The dependence of the properties of on the distance between the filament and the substrate in hetero-structured silicon carbon alloy (SiC/sub X/) films deposited with various deposition conditions by hot-wire CVD (Cat-CVD) has been studied. Based on above results, the B-doped hetero-structured SiC/sub X/ films have been deposited with a low film surface temperature, T/sub s/, condition. The optical energy gap in the low T/sub s/ sample was almost same as that of the high T/sub s/ sample, although the carbon content of the low T/sub s/ sample was smaller than that of the high T/sub s/ sample. The dark conductivity of the sample deposited with B/sub 2/H/sub 6//SiH/sub 4/ of 0.3% was 1.05/spl times/10/sup -1/ S/cm. This value was much larger than that of the high T/sub s/ sample deposited with B/sub 2/H/sub 6//SiH/sub 4/ of 0.42%.