Title :
Analysis of microcrystalline silicon solar cells prepared by hot-wire and plasma-enhanced chemical vapor deposition
Author :
Brammer, T. ; Somayajula, R.C. ; Klein, S. ; Rech, B. ; Stiebig, H.
Author_Institution :
Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany
Abstract :
The optoelectronic properties of microcrystalline silicon solar cells with i-layers fabricated by hot-wire chemical vapour deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) are compared. The current-voltage curves under illumination and in the dark, the quantum efficiency and the reflection in combination with the amorphous volume fraction as determined by Raman spectroscopy, are investigated to determine the difference, mainly in the open-circuit voltage, between these two technologies. Additionally, the voltage dependent quantum efficiency of /spl mu/c-Si:H diodes is reassessed.
Keywords :
Raman spectra; amorphous semiconductors; current density; elemental semiconductors; hydrogen; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; Raman spectroscopy; Si:H; Si:H diodes; amorphous volume fraction; current-voltage curves; hot wire chemical vapor deposition; microcrystalline silicon solar cells; optoelectronic properties; photoconductivity; plasma enhanced chemical vapor deposition;
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
