Analysis of microcrystalline silicon solar cells prepared by hot-wire and plasma-enhanced chemical vapor deposition

Author

Brammer, T. ; Somayajula, R.C. ; Klein, S. ; Rech, B. ; Stiebig, H.

Author_Institution

Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany

Volume

2

fYear

2003

fDate

18-18 May 2003

Firstpage

1764

Abstract

The optoelectronic properties of microcrystalline silicon solar cells with i-layers fabricated by hot-wire chemical vapour deposition (HWCVD) and plasma-enhanced chemical vapor deposition (PECVD) are compared. The current-voltage curves under illumination and in the dark, the quantum efficiency and the reflection in combination with the amorphous volume fraction as determined by Raman spectroscopy, are investigated to determine the difference, mainly in the open-circuit voltage, between these two technologies. Additionally, the voltage dependent quantum efficiency of /spl mu/c-Si:H diodes is reassessed.

Keywords

Raman spectra; amorphous semiconductors; current density; elemental semiconductors; hydrogen; photoconductivity; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; Raman spectroscopy; Si:H; Si:H diodes; amorphous volume fraction; current-voltage curves; hot wire chemical vapor deposition; microcrystalline silicon solar cells; optoelectronic properties; photoconductivity; plasma enhanced chemical vapor deposition;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on

Conference_Location

Osaka, Japan

Print_ISBN

4-9901816-0-3

Type

conf

Filename

1306275