DocumentCode :
413899
Title :
Magnetron sputtered zinc stannate films for silicon thin film solar cells
Author :
Kluth, Oliver ; Agashe, Chitra ; Hupkes, Jürgen ; Muller, Joachim ; Rech, Bemd
Author_Institution :
Inst. of Photovoltaics, Forschungszentrum Julich GmbH, Germany
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1800
Abstract :
Zinc stannate films have been prepared by RF magnetron sputtering using a ZnO:SnO/sub 2/-target with 33 at.% SnO/sub 2/. The influence of total pressure and substrate temperature on the electrical film properties was studied. A minimum resistivity of 2.9/spl times/10/sup -3/ /spl Omega/cm could be achieved. All zinc stannate films exhibit amorphous structure independent of the deposition conditions. The stability in hydrogen plasma was investigated with XPS. Finally, the films were applied as buffer layer and back contact in amorphous and microcrystalline p-i-n solar cells.
Keywords :
II-VI semiconductors; X-ray photoelectron spectra; amorphous semiconductors; electrical conductivity; electrical resistivity; elemental semiconductors; noncrystalline structure; semiconductor growth; semiconductor thin films; silicon; solar cells; sputter deposition; tin compounds; zinc compounds; 2.9/spl times/10/sup -3/ ohmcm; Si; XPS; ZnO:SnO/sub 2/; amorphous p-i-n solar cells; amorphous structure; back contact; buffer layer; electrical film properties; electrical resistivity; hydrogen plasma; magnetron sputtered zinc stannate films; microcrystalline p-i-n solar cells; silicon thin film solar cells;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306284
Link To Document :
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