DocumentCode
413907
Title
Investigation of the high efficiency microcrystalline silicon solar cell
Author
Shima, Masaki ; Nakagawa, Makoto ; Taira, Shigeharu ; Matsumoto, Mitsuhiro ; Shinohara, Wataru ; Matsumi, Shin ; Murata, Kenji ; Tanaka, Makoto
Author_Institution
Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Hyogo, Japan
Volume
2
fYear
2003
fDate
18-18 May 2003
Firstpage
1835
Abstract
Control of the minute structure of doped hydrogenated microcrystalline silicon (/spl mu/c-Si:H) and intrinsic /spl mu/c-Si:H was investigated in order to improve the output properties of /spl mu/c-Si:H-related solar cells. The output parameters of /spl mu/c-Si:H solar cells, especially the open circuit voltage (Voc) and fill factor (F.F.) can be improved by controlling the axis of the /spl mu/c-Si:H grains of both layers. The discontinuity of the doped and photovoltaic layer may cause a reduction in the path density of the leak current, and this contributes to an improvement of the Voc and F.F. of solar cells. Based on the developed structure, the fabrication conditions of a hydrogenated amorphous silicon (a-Si:H)//spl mu/c-Si:H stacked solar cell were optimized, and an initial efficiency of 12.6% was obtained. In addition, an integrated type a-Si:H//spl mu/c-Si:H stacked solar cell mini-module was also fabricated as a trial, and normal operation was basically confirmed.
Keywords
amorphous semiconductors; current density; elemental semiconductors; grain boundaries; hydrogen; hydrogenation; interface structure; leakage currents; plasma CVD; semiconductor thin films; silicon; solar cells; Si:H; amorphous silicon; doped hydrogenated microcrystalline silicon; fill factor; grains; leakage current density; microcrystalline silicon solar cell; open circuit voltage; photovoltaic layer; stacked solar cell minimodule;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location
Osaka, Japan
Print_ISBN
4-9901816-0-3
Type
conf
Filename
1306294
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