• DocumentCode
    413907
  • Title

    Investigation of the high efficiency microcrystalline silicon solar cell

  • Author

    Shima, Masaki ; Nakagawa, Makoto ; Taira, Shigeharu ; Matsumoto, Mitsuhiro ; Shinohara, Wataru ; Matsumi, Shin ; Murata, Kenji ; Tanaka, Makoto

  • Author_Institution
    Mater. & Devices Dev. Center, Sanyo Electr. Co. Ltd., Hyogo, Japan
  • Volume
    2
  • fYear
    2003
  • fDate
    18-18 May 2003
  • Firstpage
    1835
  • Abstract
    Control of the minute structure of doped hydrogenated microcrystalline silicon (/spl mu/c-Si:H) and intrinsic /spl mu/c-Si:H was investigated in order to improve the output properties of /spl mu/c-Si:H-related solar cells. The output parameters of /spl mu/c-Si:H solar cells, especially the open circuit voltage (Voc) and fill factor (F.F.) can be improved by controlling the axis of the /spl mu/c-Si:H grains of both layers. The discontinuity of the doped and photovoltaic layer may cause a reduction in the path density of the leak current, and this contributes to an improvement of the Voc and F.F. of solar cells. Based on the developed structure, the fabrication conditions of a hydrogenated amorphous silicon (a-Si:H)//spl mu/c-Si:H stacked solar cell were optimized, and an initial efficiency of 12.6% was obtained. In addition, an integrated type a-Si:H//spl mu/c-Si:H stacked solar cell mini-module was also fabricated as a trial, and normal operation was basically confirmed.
  • Keywords
    amorphous semiconductors; current density; elemental semiconductors; grain boundaries; hydrogen; hydrogenation; interface structure; leakage currents; plasma CVD; semiconductor thin films; silicon; solar cells; Si:H; amorphous silicon; doped hydrogenated microcrystalline silicon; fill factor; grains; leakage current density; microcrystalline silicon solar cell; open circuit voltage; photovoltaic layer; stacked solar cell minimodule;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
  • Conference_Location
    Osaka, Japan
  • Print_ISBN
    4-9901816-0-3
  • Type

    conf

  • Filename
    1306294