DocumentCode :
413911
Title :
Large area thin film Si tandem module production using VHF plasma with a ladder-shaped electrode
Author :
Noda, Matsuhei ; Nishimiya, Tatsuyuki ; Yamaguchi, Kengou ; Kawamura, Keisuke ; Sonobe, Hiroshi ; Kuroda, Masahiro ; Yamada, Akira ; Takatsuka, Hiromu ; Yamauchi, Yasuhiro ; Takeuchi, Yoshiaki
Author_Institution :
Nagasaki Res. & Dev. Center, Mitsubishi Heavy Ind. Ltd., Nagasaki, Japan
Volume :
2
fYear :
2003
fDate :
18-18 May 2003
Firstpage :
1849
Abstract :
The use of thin-film silicon for solar cells is a highly promising approach and MHI has developed the world´s largest area deposition technology for a-Si modules with 1.1 m/spl times/1.4 m substrate. Next generation a-Si/ microcrystalline-Si (/spl mu/c-Si) tandem modules have also been developed. 1 m/sup 2/-class large-scale VHF plasma uniformity was confirmed under pressure and frequency conditions of 133 Pa and 60/spl sim/100 MHz for /spl mu/c-Si film deposition. In addition, tandem modules sized 40 cm/spl times/50 cm have been fabricated in our test apparatus as a first step, and initial efficiency of 11.2% for a tandem module (total area of 1800 cm/sup 2/) was obtained. We are targeting tandem module efficiency of 12% by 2003.
Keywords :
amorphous semiconductors; elemental semiconductors; plasma CVD; semiconductor growth; semiconductor thin films; silicon; solar cells; 133 Pa; 60 to 100 MHz; Si; VHF plasma enhanced chemical vapour deposition; amorphous-Si/ microcrystalline-Si tandem modules; ladder shaped electrode; microcrystalline-Si film deposition; semiconductor growth; solar cells; tandem module efficiency; thin film Si tandem module production;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Energy Conversion, 2003. Proceedings of 3rd World Conference on
Conference_Location :
Osaka, Japan
Print_ISBN :
4-9901816-0-3
Type :
conf
Filename :
1306298
Link To Document :
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