Process and device reliability characterization techniques for advanced CMOS technology: the issues and methodologies

Author

Chung, Steve S.

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2004

fDate

22-25 March 2004

Firstpage

93

Lastpage

97

Abstract

This paper will give an overview of more advanced charge pumping and Gated-Diode techniques for the process and reliability characterization of advanced CMOS devices. Its potential use for the device hot carrier reliability study and process characterization, e.g., oxide quality monitor, plasma-induced oxide damage, and STI effects will be presented. More recent developments for 1nm range ultra-thin gate oxide CMOS device applications will also be demonstrated. Further development and the road-blocks of these techniques will be addressed.

Keywords

CMOS integrated circuits; VLSI; hot carriers; integrated circuit measurement; integrated circuit reliability; interface states; isolation technology; leakage currents; STI effects; advanced CMOS devices; advanced charge pumping techniques; advanced gated-diode techniques; hot carrier reliability; interface traps; oxide quality monitor; oxide trapped charges; plasma-induced oxide damage; process characterization; reliability characterization; sensitive measurement; time dependence; ultrathin gate oxide device; CMOS process; CMOS technology; Charge pumps; Current measurement; Leakage current; Microelectronics; Monitoring; Switches; Testing; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on

Print_ISBN

0-7803-8262-5

Type

conf

DOI

10.1109/ICMTS.2004.1309308

Filename

1309308