Title :
Plasma-damage optimization of the liner-removal process for 300 mm 0.13 μm copper dual-damascene BEOL manufacturing
Author :
Sun, Shu-Huei ; Chen, Shih-Ming ; Fang, Joseph Weng-Liang ; Huang, Ching-Yu ; Li, Tsai-Chun ; Lin, Chun-Chen ; Ma, Shawming ; Kutney, Michael
Author_Institution :
Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan
Abstract :
In this paper, an approach for optimizing plasma-charging damage of liner-removal process for 300 mm copper dual-damascene BEOL manufacturing is described. A specially designed cathode was first used to screen the process parameter response on damage performance. Real-time monitoring of etcher parameters during the process provided fast feedback about any plasma transient instability. Implementation of match tune and load preset methodology further improved the plasma transient uniformity to ensure an acceptable plasma-damage performance window from antenna MOS transistor parametric test results.
Keywords :
MOSFET; copper; integrated circuit manufacture; integrated circuit metallisation; optimisation; plasma materials processing; semiconductor device manufacture; 0.13 micron; 300 mm; BEOL manufacturing; Cu; antenna MOS transistor parametric test; cathode; copper dual-damascene BEOL manufacturing; etcher parameter; liner removal process; load preset methodology; match tune implementation; plasma charging damage optimization; plasma transient instability; plasma transient uniformity; process parameter response; real time monitoring; Cathodes; Condition monitoring; Copper; Etching; Feedback; Manufacturing processes; Plasma applications; Plasma displays; Plasma materials processing; Pulp manufacturing;
Conference_Titel :
Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
Print_ISBN :
0-7803-8312-5
DOI :
10.1109/ASMC.2004.1309568
