The ways of threshold current reduction in mid-IR QW lasers

This paper presents a theoretical model for reducing threshold current of mid-IR lasers, and finding methods for lasers optimization. Two structures In_0,35Ga_0,65As_0,15Sb_0,85/GaSb and In_0,35Ga_0,65As_0,15Sb_0,85/Al_0,35Ga_{0, 65}As_0,03Sb_0,97 were taken for investigation. The main feature of the model lies in the fact that the optimization problem can be set out in the form of easy and concrete expressions and indicates the ways of optimization of semiconductor mid-infrared laser diodes and the possibility of their fabrication for performance with stable generation above room temperatures.