Title :
Structural and electrical characterizations of long pulse XeCl excimer laser annealed Al+ ion implanted 4H-SiC
Author :
Dutto, C. ; Fogarassy, E. ; Mathiot, D. ; Muller, D. ; Kern, P. ; Joulie, S. ; Werckmann, J.
Author_Institution :
STMicroelectron., Tours, France
Abstract :
In this paper, we demonstrate the possibility to anneal the Al+ ion-implantation induced damage into 4H-SiC by laser processing using a new XeCl excimer source of 200 ns pulse duration (∼ten times longer than the classical one). The laser irradiation conditions corresponding to solid phase annealing were estimated from thermal simulations and confirmed experimentally by SIMS measurements.
Keywords :
excimer lasers; high-speed optical techniques; hydrogen; ion implantation; laser beam annealing; optical materials; silicon compounds; wide band gap semiconductors; xenon compounds; 200 ns; SIMS measurement; SiC; XeCl; XeCl excimer source; electrical characterization; ion implantation; laser irradiation condition; laser processing; pulse XeCl excimer laser annealing; solid phase annealing; structural characterization; thermal simulation; Annealing; Fabrication; Frequency; Optical materials; Optical pulses; Pulsed laser deposition; Semiconductor device doping; Silicon carbide; Temperature; Wide band gap semiconductors;
Conference_Titel :
Lasers and Electro-Optics Europe, 2003. CLEO/Europe. 2003 Conference on
Print_ISBN :
0-7803-7734-6
DOI :
10.1109/CLEOE.2003.1313614
