Title :
A Unified Two-Band Model for Oxide Traps and Interface States in MOS Capacitors
Author :
Yuan Taur ; Han-Ping Chen ; Qian Xie ; Jaesoo Ahn ; McIntyre, Paul C. ; Lin, Dennis ; Vais, Abhitosh ; Veksler, Dmitry
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California at San Diego, La Jolla, CA, USA
Abstract :
The distributed oxide trap model based on tunneling of carriers from the semiconductor surface is unified with the two-band Shockley-Read-Hall type of capture and emission model for interface states. The new model explains the often observed upturn of MOS conductance at high frequencies when biased in inversion. The unified two-band model fully covers both types of charge traps in all MOS bias regions.
Keywords :
MOS capacitors; interface states; tunnelling; MOS capacitor; MOS conductance; carriers tunneling; charge trap; distributed oxide trap model; interface state; semiconductor surface; two-band Shockley-Read-Hall type; unified two-band model; Electron traps; Indium gallium arsenide; Interface states; Mathematical model; Semiconductor device modeling; Substrates; Tunneling; InGaAs; MOS; interface state model; oxide traps; oxide traps.;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2015.2389805
