DocumentCode :
415517
Title :
Advanced junction isolation structures for Power Integrated Circuit technology
Author :
Mawby, P.A. ; Starke, T.K.H. ; Holland, P.M. ; Hussain, S. ; Jamal, W.M. ; Igic, P.M.
Author_Institution :
Sch. of Eng., Univ. of Wales, Swansea, UK
Volume :
1
fYear :
2004
fDate :
16-19 May 2004
Firstpage :
17
Abstract :
This paper describes recent experimental work carried on the optimisation of junction isolation structures for use in Power Integrated Circuits. Isolation is required to collect minority carriers injected into the substrate before the can reach the low voltage control circuitry. The most effect form of isolation found in this paper combines A number of techniques (SJI & MAAP) to reduce the injected current by3 orders of magnitude compared with the standard junction isolation techniques.
Keywords :
power integrated circuits; power semiconductor diodes; semiconductor junctions; MAAP; Power Integrated Circuit technology; SJI; advanced junction isolation structures; collect minority carriers; low voltage control circuitry; CMOS technology; Dielectric devices; Dielectric substrates; Integrated circuit technology; Isolation technology; Low voltage; Power integrated circuits; Power transistors; Protection; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
Type :
conf
DOI :
10.1109/ICMEL.2004.1314550
Filename :
1314550
Link To Document :
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