Title :
Power capabilities of RF MEMS
Author :
Ducarouge, B. ; Dubuc, D. ; Flourens, F. ; Melle, S. ; Ongareau, E. ; Grenier, K. ; Boukabache, A. ; Conedera, V. ; Pons, P. ; Perret, E. ; Aubert, H. ; Plana, R.
Author_Institution :
LAAS, CNRS, Toulouse, France
Abstract :
This paper outlines the power capabilities of RF MEMS devices. It is shown the specific needs concerning the technology, the design and the geometry of the devices in order to circumvent self-actuation, AC electromigration, thermal effect and reliability.
Keywords :
current density; electromigration; micromechanical devices; power semiconductor devices; semiconductor device breakdown; semiconductor device reliability; AC electromigration; RF MEMS; design; geometry; power capabilities; reliability; self-actuation; technology; thermal effect; Bridge circuits; Electromigration; Equations; Integrated circuit technology; Mechanical factors; Micromechanical devices; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Voltage;
Conference_Titel :
Microelectronics, 2004. 24th International Conference on
Print_ISBN :
0-7803-8166-1
DOI :
10.1109/ICMEL.2004.1314559
