DocumentCode
415527
Title
Platinum implantation versus platinum silicide for the local lifetime control of power P-i-N diode
Author
Vobecký, J. ; Hazdra, P.
Author_Institution
Dept. of Microelectron., Czech Tech. Univ., Prague, Czech Republic
Volume
1
fYear
2004
fDate
16-19 May 2004
Firstpage
125
Abstract
Low-temperature diffusion (700 - 725°C) of platinum from platinum silicide and implanted layer of platinum (1 MeV) at the anode side of power P-i-N silicon diode were used for local lifetime control. PtSi allows Much higher maximal reduction of excess carrier lifetime than that of implanted platinum (due to the defects from platinum implantation), but still much lower than the standard helium irradiation.
Keywords
carrier lifetime; diffusion; ion implantation; p-i-n diodes; platinum; platinum compounds; power semiconductor diodes; semiconductor device reliability; 1 MeV; 700 to 725 degC; Pt implantation; PtSi2; PtSi2-Si; Si:Pt; excess carrier lifetime; higher maximal reduction; local lifetime control; low-temperature diffusion; power P-i-N diode; Alpha particles; Annealing; Anodes; Helium; Ion beams; P-i-n diodes; Platinum; Silicides; Silicon; Sputtering;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics, 2004. 24th International Conference on
Print_ISBN
0-7803-8166-1
Type
conf
DOI
10.1109/ICMEL.2004.1314570
Filename
1314570
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